BA782S and ba783s vishay semiconductors formerly general semiconductor document number 88122 www.vishay.com 15-may-02 1 bandswitching diodes features ?silicon epitaxial planar diode switches ?for electric bandswitching in radio and tv tuners in the frequency range of 50...1000 mhz. the dynamic forward resistance is constant and very small over a wide range of frequency and forward current. the reverse capacitance is also small and largely independent of the reverse voltage. ?these diodes are also available in sod-123 case with the type designations ba782 and ba783. maximum ratings and thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit reverse voltage v r 35 v forward continuous current at t amb = 25 ci f 100 ma junction temperature t j 125 c storage temperature range t s 55 to +125 c mechanical data case: sod-323 plastic case weight: approximately 0.004g cathode band color: blue packaging codes/options: d5/10k per 13 reel (8mm tape), 30k/box d6/3k per 7 reel (8mm tape), 30k/box .006 (0.15) max. .010 (0.25) min. .012 (0.3) .076 (1.95) .112 (2.85) .059 (1.5) .004 (0.1) max. .049 (1.25) max. cathode band to p v i ew .100 (2.55) .065 (1.65) .043 (1.1) 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) pad layout sod-323 sod-323 dimensions in inches and (millimeters)
BA782S and ba783s vishay semiconductors formerly general semiconductor www.vishay.com document number 88122 2 15-may-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol test condition min typ max unit forward voltage v f i f = 100ma 1v leakage current i r v r = 20v 50 na ba782 f = 50...1000mhz, i f = 3ma 0.7 dynamic forward resistance ba783 r f 1.2 ? ba782 f = 50...1000mhz, i f = 10ma 0.5 ba783 0.9 v r = 1v, f = 1mhz 1.5 capacitance ba782 c tot v r = 3v, f = 1mhz 1.25 pf ba783 1.2 series inductance across case l s 2.5 nh ratings and characteristic curves (t a = 25 c unless otherwise noted)
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